Friday, February 26, 2016

Faster than traditional SSD Samsung Unveils 256GB UFS 2 0 Flash memory

Faster than traditional SSD Samsung Unveils 256GB UFS 2.0 Flash memory

  Weifeng Web on February 26 a few days ago, Samsung officially announced, JEDEC standard next-generation NAND-based Flash memory stores a year later and again received a major breakthrough, the world's first fast 256GB capacity to read and write UFS 2.0 embedded Flash memory storage of particles has been officially unveiled, compared to the previous generation capacity doubled, and more than twice faster times.

  Before then the UFS to explain the so-called embedded Flash storage, which is the latest and greatest universal Flash storage of UFS 2.0 (Universal Flash Storage) on the embedded memory interface, and with the new inline stacking (ePoP) solution stack directly on the logic chip, known as compared to traditional Flash memory to save about 50% of space.

  Most importantly, thanks to the common language of SSD storage "Command Queuing (Command Queue)" technology, namely via the serial interface technology to accelerate the command to execute, so its data processing speed has increased significantly, exceeding the conventional 8-bit parallel interfaces eMMC standard.

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  The first-generation UFS Samsung 2.0 embedded Flash is released in February 2015, when it can reach a maximum storage capacity of 128GB. Has just released the second generation, Samsung storage capacity up to 1 time-times, 256GB.

  From the capacity is concerned, 256GB UFS 2.0 Flash can actually rival SSD, solid state drive, after all, does not fit into a smart phone. However, volume is not a Samsung UFS store most worthy of boasting the only capital, performance is essential. New UFS 2.0 sustained Read speed of Flash have risen to staggering 850MB/s, which has been completely beyond traditional SATA interface SSD.

  In terms of writing, Samsung UFS Flash 2.0 256GB also has 260MB/S sustained write speed of, which is about three times average external microSD card. Meanwhile, the first-generation UFS 2.0 Flash random read and write operation to a read/write IOPS is 19000 and 14000, this generation up to 45000 40000, UFS Flash more than twice times faster than the previous generation. Disney iPhone case Disney iPhone 5s case

  Thanks to UFS 2.0 256GB Flash memory technology upgrades, future mobile devices with such Flash, whether it is a Smartphone or a Tablet, you can watch 4K Ultra HD ultra high definition TV and video, and helps raise big-screen smart phone handle multitasking performance and speed, 4K video, and multitasking are not a problem. Samsung even thinks that, even in the split-screen view two 4K video on mobile devices ensures sufficient speed, cell phones pace of searching for images or files within seconds.

  Samsung also said that, at present, many smartphone makers of products are based on USB 3.0 interface design has been adopted, if matching UFS Flash, can complete a 12 second video 5GB size. In addition, the Samsung highlight, another major feature of UFS flash chip is very small, compared to smaller external microSD card.

  Samsung didn't boast about the latest release of its flagship Smartphone Galaxy S7 and Galaxy S7 Edge has been adopted, but Samsung is released UFS 2.0 Flash memory technology at the same time last year, taking into account the previous Galaxy S6 is released on March 2, and has successfully carried the first generation product, so not surprisingly, Galaxy and Galaxy S7 S7 Edge using the latest generation.

[Article correction]

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Tags:PC and hardware Science and technology

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